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 DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PC8112TB
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE
DESCRIPTION
The PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The PC8112TB features high impedance output of open collector. Similar ICs of the PC2757TB and PC2758TB feature low impedance output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The PC8112TB is manufactured using NEC's 20 GHz fT NESATTMIII silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
* Excellent RF performance * * * * * * : IIP3 = -7 dBm@fRFin = 1.9 GHz (reference) IM3 = -88 dBc@PRFin = -38 dBm, 1.9 GHz (reference) Similar conversion gain to PC2757 and lower noise figure than PC2758 Minimized carrier leakage : RFIo = -80 dB@fRFin = 900 MHz (reference) RFIo = -55 dB@fRFin = 1.9 GHz (reference) High linearity : PO (sat) = -2.5 dBm TYP.@fRFin = 900 MHz PO (sat) = -3 dBm TYP.@fRFin = 1.9 GHz Low current consumption : ICC = 8.5 mA TYP. Supply voltage : VCC = 2.7 to 3.3 V High-density surface mounting : 6-pin super minimold package
APPLICATIONS
* 1.5 GHz to 1.9 GHz cellular/cordless telephone (PHS, DECT, PDC1.5G and so on) * 800 MHz to 900 MHz cellular telephone (PDC800M and so on)
ORDER INFORMATION
Part Number Package 6-pin super minimold Markings C2K Supplying Form Embossed tape 8 mm wide. Pin 1, 2, 3 face the tape perforation side. Qty 3kpcs/reel.
PC8112TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: PC8112TB) Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P12808EJ2V0DS00 (2nd edition) Date Published June 2000 N CP(K) Printed in Japan
The mark
shows major revised points.
(c)
1997, 2000
PC8112TB
PIN CONNECTIONS
Pin No.
(Top View) (Bottom View) 4 5 6 4 5 6 3 2
Pin Name RFinput GND LOinput PS VCC IFoutput
1 2 3 4
1
3 2 1
C2K
5 6
PRODUCT LIN-UP (TA = +25C, VCC = 3.0 V, ZS = ZL = 50 )
Items Part Number No RF ICC (mA) 5.6 900 MHz 1.5 GHz 1.9 GHz 900 MHz CG SSB * NF SSB * NF SSB * NF (dB) (dB) (dB) (dB) 10 10 13 15 1.5 GHz CG (dB) 15 1.9 GHz CG (dB) 13 900 MHz IIP3 (dBm) -14 1.5 GHz IIP3 (dBm) -14 1.9 GHz IIP3 (dBm) -12
PC2757T PC2757TB PC2758T PC2758TB PC8112T PC8112TB
11
9
10
13
19
18
17
-13
-12
-11
8.5
9
11
11
15
13
13
-10
-9
-7
Items Part Number
900 MHz PO(sat) (dBm) -3
1.5 GHz PO(sat) (dBm) -
1.9 GHz PO(sat) (dBm) -8
900 MHz RFLO (dB) -
1.5 GHz RFLO (dB) -
1.9 GHz RFLO (dB) -
IF Output Configuration Emitter follower
Package
PC2757T PC2757TB PC2758T PC2758TB PC8112T PC8112TB
6-pin minimold 6-pin super minimold
+1
-
-4
-
-
-
6-pin minimold 6-pin super minimold
-2.5
-3
-3
-80
-57
-55
Open collector
6-pin minimold 6-pin super minimold
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Caution 1. The PC2757 and PC2758's IIP3 are calculated with IM3 = 3 which is the same IM3 inclination as
PC8112. On the other hand, OIP3 of Standard characterisitcs in page 6 is cross point IP.
2. This document is to be specified for PC8112TB. The other part number mentioned in this document should be referred to the data sheet of each part number.
2
Data Sheet P12808EJ2V0DS00
PC8112TB
INTERNAL BLOCK DIAGRAM
RFinput IFoutput
LOinput
PC8112TB LOCATION EXAMPLE IN THE SYSTEM
Digital cordless phone
Low noise Tr. RX
PC8112TB
DEMOD. I Q
SW
VCO
/N
PLL PLL
0 TX PA
I
90 Q
Data Sheet P12808EJ2V0DS00
3
PC8112TB
PIN EXPLANATION
Applied Voltage (V) -
Pin No. 1
Pin Name RFinput
Pin Voltage (V) 1.2
Function and Application
Internal Equivalent Circuit
RF input pin of mixer. This mixer is designed as double balanced type. This pin should be externally coupled to front stage with DC cut capacitor. Ground pin. This pin must be connected to the system ground. Form the ground pattern as wide as possible and the truck length as short as possible to minimize ground impedance. Supply voltage pin. This pin should be connected with bypass capacitor (example: 1 000 pf) to minimize ground impedance. IF output pin. This output is configured with open collector of high impedance. This pin should be externally equipped with matching circuit of inductor should be selected as small resistance and high frequency use. Input pin of local amplifier. This amplifier is designed as differential type. This pin should be externally coupled to local signal source with DC cut capacitor. Recommendable input level is -15 to 0 dBm.
5
2
GND
0
-
6 From LO 1
5
VCC
2.7 to 3.3
-
2
6
IFoutput
as same as VCC voltage through external inductor
-
3
LOinput
-
1.4
5
To mixer 3
2
4
PS
VCC or GND
-
Power save control pin. This pin can control ON/OFF operation with bias as follows; Bias: V VPS 2.5 0 to 0.5 Operation ON OFF
5
4
2
4
Data Sheet P12808EJ2V0DS00
PC8112TB
ABSOLUTE MAXIMUM RATINGS
Parameter Supply Voltage Total Circuit Current Total Power Dissipation Symbol VCC ICC PD Conditions TA = +25C, 5 pin and 6 pin TA = +25C Mounted on double sided copper clad 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85C) Ratings 3.6 77.7 200 -40 to +85 -55 to +150 Unit V mA mW C C
Operating Ambient Temperature Storage Temperature
TA Tstg
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Symbol VCC MIN. 2.7 -40 -15 0.8 100 TYP. 3.0 +25 -10 1.9 250 MAX. 3.3 +85 0 2.0 300 Unit V C dBm GHz MHz With external matching Zs = 50 Remark 5 pin and 6 pin should be applied to same voltage.
Operating Ambient Temperature LO Input Level RF Input Frequency IF Output Frequency
TA PLOin fRFin fIFout
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C, VCC = VPS = VIFout = 3.0 V, PLOin = -10 dBm, ZS = ZL = 50 )
Parameter Circuit Current Circuit Current at Power Save Mode Conversion Gain Symbol ICC ICC(PS) No signals VCC = 3.0 V, VPS = 0.5 V Test Conditions MIN. 4.9 - TYP. 8.5 - MAX. 11.7 0.1 Unit mA
A
dB
CG
fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.9 GHz, fLOin = 1.66 GHz fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.9 GHz, fLOin = 1.66 GHz fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.9 GHz, fLOin = 1.66 GHz (PRFin = -10 dBm each)
11.5 9.5 - - -6.5 -7
15 13 9.0 11.2 -2.5 -3
17.5 15.5 11 13.2 - -
Single Side Band Noise Figure
SSB*NF
dB
Saturated Output Power
Po(sat)
dBm
Data Sheet P12808EJ2V0DS00
5
PC8112TB
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25C, VCC = VPS = VIFout = 3.0 V, PLOin = -10 dBm, ZS = ZL = 50 )
Parameter Conversion Gain Single Side Band Noise Figure LO Leakage at RF pin Symbol CG SSB*NF LORF Test Conditions fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 1.9 GHz, fLOin = 1.66 GHz fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 1.9 GHz, fLOin = 1.66 GHz fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 1.9 GHz, fLOin = 1.66 GHz fRFin = 900 MHz, fLOin = 1 000 MHz fRFin = 1.5 GHz, fLOin = 1.6 GHz fRFin = 1.9 GHz, fLOin = 1.66 GHz Reference 13 11 -45 -46 -45 -80 -57 -55 -32 -33 -30 -10 -9 -7 Unit dB dB dB
RF Leakage at LO pin
RFLO
dB
LO Leakage at IF pin
LOif
dB
Input 3rd Order Intercept Note Point
IIP3
dBm
Note IIP3 is determined by comparing two method; theoretical calculation and cross point of IM3 curve. IIP3 = (IM3 x Pin + CG - IM3) / (IM3 - 1) (dBm) [IM3: IM3 curve inclination in linear range]
PC8112's IM3 is closer to 3 (theoretical inclination) than PC2757 and PC2758 of conventional ICs.
TEST CIRCUIT
(Top View) Signal Generator 50 1 000 pF 3 C2 2 Signal Generator 50 1 000 pF 1 C1 RFinput IFoutput 6 C6 Spectrum Analyzer GND VCC 5 L1 50 LOinput PS 4 POWER SAVE
C4, C5
3V
6
Data Sheet P12808EJ2V0DS00
PC8112TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
C3 LO input C2 PS
PS bias
C4 GND L1 C6 Short Chip VCC C5 Voltage supply
RF input
C1
IF output Short Chip = 1 000 pF
Component Number C1 to C5 C6 L1
IF 100 MHz Matching 1 000 pF 5 pF 330 nH
IF 240 MHz Matching 1 000 pF 2 pF 84 nH
Remarks CHIP C CHIP C CHIP L
EVALUATION BOARD CHARACTERS AND NOTE
(1) 35 m thick double-sided copper clad 35 x 42 x 0.4 mm polyimide board (2) Back side: GND pattern (3) Solder plated patterns (4) {: Through holes (5) To mount C6, pattern should be cut. CAUTION Test circuit or print pattern in this sheet is for testing IC characteristics. They are not an application circuit or recommended system circuit. In the case of actual system application, external circuits including print pattern and matching circuit constant of output port should be designed in accordance with IC's S-parameters and environmental components. Remark External circuits of the IC can be referred to following application notes. * USAGE AND APPLICATION CHARACTERISTICS OF PC2757, PC2758, AND PC8112, 3-V POWER SUPPLY, 1.9-GHz FREQUENCY DOWN-CONVERTER ICS FOR MOBILE COMMUNICATION (Document No. P11997E)
Data Sheet P12808EJ2V0DS00
7
PC8112TB
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified, measured on test circuits)
-Without Signals- -
CIRCUIT CURRENT vs. SUPPLY VOLTAGE 12 VCC = VPS = VIFout 10
Circuit Current ICC (mA) Circuit Current ICC (mA)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE 12 10 8 TA = +25C 6 TA = -40C 4 2 0 VCC = VPS = VIFout TA = +85C
8 6 4 2 0 0 2 3 1 Supply Voltage VCC (V) 4
0
2 3 1 Supply Voltage VCC (V)
4
CIRCUIT CURRENT vs. PS PIN APPLIED VOLTAGE 12 VCC = VIFout VCC = 3.3 V 10
Circuit Current ICC (mA)
8 VCC = 3.0 V 6 4 2 0 VCC = 2.7 V
0
2 3 1 PS Pin Applied Voltage VPS (V)
4
8
Data Sheet P12808EJ2V0DS00
PC8112TB
S-PARAMETERS
-Calibrated on pin of DUT- -
S11 Z REF 1.0 Units 1 200.0 mUnits/ 62.711 -224.07 hp MARKER 1 500.0 MHz S11 Z REF 1.0 Units 1 200.0 mUnits/ 76.656 -421.67 hp MARKER 1 500.0 MHz
1 1 2 4 3 2 5 4 3
5
RF PORT VCC = VPS = 3.0V 1:500 MHz 62.711 -j224.07 2:900 MHz 48.977 -j219.18 3:1 500 MHz 40.641 -j129.94 4:1 900 MHz 37.422 -j101.51 5:2 500 MHz 34.801 -j74.141 S11 Z REF 1.0 Units 1 200.0 mUnits/ 169.11 -429.98 hp MARKER 1 500.0 MHz
START 0.050000000 GHz STOP 3.000000000 GHz
RF PORT VCC = 3.0V VPS = GND 1:500 MHz 76.656 -j421.67 2:900 MHz 53.102 -j234.55 3:1 500 MHz 44.844 -j140.82 4:1 900 MHz 40.898 -j109.73 5:2 500 MHz 38.063 -j80.547 S11 Z REF 1.0 Units 1 200.0 mUnits/ 135.53 -575.06 hp MARKER 1 500.0 MHz
START 0.050000000 GHz STOP 3.000000000 GHz
1
1
2 5 4 3 5 4 3
2
LO PORT VCC = VPS = 3.0V 1:500 MHz 169.11 -j429.98 2:900 MHz 91.875 -j263.7 3:1 500 MHz 60.781 -j162.56 4:1 900 MHz 56.789 -j125.66 5:2 500 MHz 49.652 -j97.602 S22 Z REF 1.0 Units 1 200.0 mUnits/ 201.00 -1.7173 k hp MARKER 1 100.0 MHz
START 0.050000000 GHz STOP 3.000000000 GHz
LO PORT VCC = 3.0V VPS = GND 1:500 MHz 135.53 -j575.06 2:900 MHz 78.266 -j337.66 3:1 500 MHz 55.883 -j201.43 4:1 900 MHz 52.734 -j159.63 5:2 500 MHz 44.262 -j122.66 S22 Z REF 1.0 Units 1 200.0 mUnits/ 056.56 -1.7468 k hp MARKER 1 100.0 MHz
START 0.050000000 GHz STOP 3.000000000 GHz
1
1
2
2
IF PORT VCC = VPS = 3.0V 1:100 MHz 201.88 -j1.7173 k 2:240 MHz 92.094 -j715.72
START 0.050000000 GHz STOP 3.000000000 GHz
IF PORT VCC = 3.0V VPS = GND 1:100 MHz 56.56 -j1.7468 k 2:240 MHz 85.5 -j722.22
START 0.050000000 GHz STOP 3.000000000 GHz
Data Sheet P12808EJ2V0DS00
9
PC8112TB
S-PARAMETERS OF IF OUTPUT MATCHING (VCC = VPS = VIFout = 3.0 V) (This S11 is monitored at IF connector on test circuit fixture)
IF 100 MHz MATCHING
S11 1 hp U FS 1: 50.277 -22.559 70.552 pF 100.000 000 MHz S11 1 hp U
-ON TEST CIRCUIT- -
IF 240 MHz MATCHING
FS 1 : 31.052 -84.961 m 7.8053 nF 240.000 000 MHz
MARKER 1 100 MHz
MARKER 1 240 MHz
1 1
START 50.000 000 MHz S11
STOP 3 000.000 000 MHz
START 50.000 000 MHz S11
STOP 3 000.000 000 MHz
log MAG. 10 dB/ REF 0 dB 1 : -27.655 dB hp 102.366 002 MHz MARKER 1 102.366002 MHz
log MAG. 10 dB/ REF 0 dB 1 : -13.556 dB hp 241.770 000 MHz MARKER 1 241.770000 MHz
1
1
START 90.000 000 MHz
STOP 110.000 000 MHz
START 230.000 000 MHz
STOP 250.000 000 MHz
The data in this page are to make clear the test condition of impedance matched to next stage, not specify the recommended condition. The S11 smith charts of the test fixture setting IC are normalized to ZO = 50 , because the IC's load is the measurement equipment of 50 impedance. In your use, the output return loss value can be helpful information to adjust your circuit matching to next stage.
10
Data Sheet P12808EJ2V0DS00
PC8112TB
IF 100 MHz MATCHING
IF OUTPUT LEVEL vs. RF INPUT LEVEL 0
IF Output Level PIFout (dBm) IF Output Level PIFout (dBm)
IF OUTPUT LEVEL vs. RF INPUT LEVEL 0 -5 -10 VCC = 2.7 V -15 -20 -25 -30 -35 -50 fRFin = 900 MHz fLOin = 1 000 MHz fIFout = 100 MHz PLOin = -10 dBm VCC = VPS = VIFout = 3.0 V -30 -20 -40 -10 RF Input Level PRFin (dBm) 0
-5 -10 -15 -20 -25 -30 -35 -50 fRFin = 900 MHz fLOin = 1 000 MHz fIFout = 100 MHz PLOin = -10 dBm VCC = VPS = VIFout = 3.0 V -30 -20 -40 -10 RF Input Level PRFin (dBm) 0
VCC = 3.3 V
VCC = 3.0 V
3rd Order Intermodulation Distortion IM3 (dBm) IF Output Level of Each Tone PIFout (dBm)
3rd ORDER INTERMODULATION DISTORTION, IF OUTPUT LEVEL vs. RF INPUT LEVEL 20 10 0 -10 Pout -20 -30 -40 -50 -60 -70 -50 IM3 fRFin1 = 900 MHz fRFin2 = 905 MHz fLOin = 1 000 MHz PLOin = -10 dBm VCC = VPS = VIFout = 3.0 V fIFout = 100 MHz -30 -20 -40 -10 RF Input Level PRFin (dBm) 0
Conversion Gain CG (dB)
CONVERSION GAIN vs. LO INPUT LEVEL 20 15 10 5 0 -5 -10 -50
fRFin = 900 MHz PRFin = -40 dBm fLOin = 1 000 MHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V -40 -30 -20 0 -10 LO Input Level PLOin (dBm) 10
Data Sheet P12808EJ2V0DS00
11
PC8112TB
IF 100 MHz MATCHING
CONVERSION GAIN vs. SUPPLY VOLTAGE 20
SSB Noise Figure SSB*NF (dB)
SSB NOISE FIGURE vs. LO INPUT LEVEL 20 18 16 14 12 10 8 6 -40 -20 -10 -30 LO Input Level PLOin (dBm) fRFin = 900 MHz fLOin = 1 000 MHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V
Conversion Gain CG (dB)
15
10
5
0
fRFin = 900 MHz fLOin = 1 000 MHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V 2 3 3.5 2.5 Supply Voltage VCC (V) 4
0
CONVERSION GAIN vs. IF OUTPUT FREQUENCY 20 15
Conversion Gain CG (dB)
10 5 0 -5 -10 -15 -20 -25 0 fRFin = 900 MHz PRFin = -40 dBm PLOin = -10 dBm VCC = VPS = VIFout = 3.0 V 50 100 150 200 250 300 350 400 450 500 IF Output Frequency fIFout (MHz)
12
Data Sheet P12808EJ2V0DS00
PC8112TB
IF 100 MHz MATCHING
IF OUTPUT LEVEL vs. RF INPUT LEVEL 5
IF Output Level PIFout (dBm) IF Output Level PIFout (dBm)
IF OUTPUT LEVEL vs. RF INPUT LEVEL 5 0 -5 VCC = 3.3 V -10 VCC = 3.0 V -15 -20 -25 -30 -50 -40 fRFin = 1.5 GHz fLOin = 1.6 GHz PLOin = -10 dBm fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V -30 -20 -10 0 RF Input Level PRFin (dBm) 10 VCC = 2.7 V
0 -5 -10 -15 -20 -25 -30 -50 fRFin = 1.5 GHz fLOin = 1.6 GHz PLOin = -10 dBm fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V -40 -30 -20 -10 0 RF Input Level PRFin (dBm) 10
3rd Order Intermodulation Distortion IM3 (dBm) IF Output Level of Each Tone PIFout (dBm)
3rd ORDER INTERMODULATION DISTORTION, IF OUTPUT LEVEL OF EACH TONE vs. RF OUTPUT LEVEL 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -40 IM3 fRFin1 = 1.5 GHz fRFin2 = 1.505 GHz fLOin = 1.6 GHz PLOin = -10 dBm fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V -30 -20 -10 RF Input Level PRFin (dBm) 0
Conversion Gain CG (dB)
CONVERSION GAIN vs. LO INPUT POWER 15 10 5 0 -5 -10 -15 -50
Pout
fRFin = 1.5 GHz fLOin = 1.6 GHz PRFin = -40 dBm fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V -40 -30 -20 0 -10 LO Input Level PLOin (dBm) 10
Data Sheet P12808EJ2V0DS00
13
PC8112TB
IF 100 MHz MATCHING
CONVERSION GAIN vs. SUPPLY VOLTAGE 15
SSB Noise Figure SSB*NF (dB)
SSB NOISE FIGURE vs. LO INPUT LEVEL 30 25 20 15 10 5 0 -40 fRFin = 1.5 GHz fLOin = 1.6 GHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V -30 -20 -10 0 LO Input Level PLOin (dBm)
Conversion Gain CG (dB)
10
5 fRFin = 1.5 GHz fLOin = 1.6 GHz fIFout = 100 MHz VCC = VPS = VIFout = 3.0 V 2 2.5 3 3.5 4 Supply Voltage VCC (V)
0
14
Data Sheet P12808EJ2V0DS00
PC8112TB
IF 240 MHz MATCHING
IF OUTPUT LEVEL vs. RF INPUT LEVEL 0
IF Output Level PIFout (dBm) IF Output Level PIFout (dBm)
IF OUTPUT LEVEL vs. RF INPUT LEVEL 0 -5 VCC = 3.3 V -10 -15 -20 -25 -30 -35 -40 -50 VCC = 2.7 V VCC = 3.0 V fRFin = 1.9 GHz fLOin = 1.66 GHz PLOin = -10 dBm fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V -30 -20 -40 -10 RF Input Level PRFin (dBm) 0
-5 -10 TA = -40C -15 TA = +85C -20 -25 -30 -35 -40 -50 fRFin = 1.9 GHz fLOin = 1.66 GHz PLOin = -10 dBm fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V -30 -20 -40 -10 RF Input Level PRFin (dBm) 0 TA = +25C
3rd Order Intermodulation Distortion IM3 (dBm) IF Output Level of Each Tone PIFout (dBm)
3rd ORDER INTERMODULATION DISTORTION, IF OUTPUT LEVEL OF EACH TONE vs. RF INPUT LEVEL 20 10 0 -10 -20 -30 -40 -50 -60 -70 -50 IM3 fRFin1 = 1.9 GHz fRFin2 = 1.905 GHz fLOin = 1.66 GHz PLOin = -10 dBm VCC = VPS = VIFout = 3.0 V fIFout = 240 MHz 0 Pout
Conversion Gain CG (dB)
CONVERSION GAIN vs. LO INPUT LEVEL 15 10 5 0 -5 -10 -15 -50
fRFin = 1.9 GHz PRFin = -40 dBm fLOin = 1.66 GHz fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V -40 -30 -20 0 -10 LO Input Level PLOin (dBm) 10
-30 -20 -40 -10 RF Input Level PRFin (dBm)
Data Sheet P12808EJ2V0DS00
15
PC8112TB
IF 240 MHz MATCHING
CONVERSION GAIN vs. SUPPLY VOLTAGE 15
SSB Noise Figure SSB*NF (dB)
SSB NOISE FIGURE vs. LO INPUT LEVEL 20 18 16 14 12 10 fRFin = 1.9 GHz fLOin = 1.66 GHz 8 fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V 6 -20 -40 -10 -30 LO Input Level PLOin (dBm)
Conversion Gain CG (dB)
10
5
0
fRFin = 1.9 GHz PRFin = -40 dBm fLOin = 1.66 GHz PLOin = -10 dBm fIFout = 240 MHz VCC = VPS = VIFout = 3.0 V 2 3 3.5 2.5 Supply Voltage VCC (V) 4
0
5
CONVERSION GAIN vs. IF OUTPUT FREQUENCY 15 10
Conversion Gain CG (dB) SSB Noise Figure SSB*NF (dB)
SSB NOISE FIGURE vs. OPERATING AMBIENT TEMPERATURE 15 14 13 12 11 10 9 8 7 6 5 -40 fRFin = 1.9 GHz fLOin = 1.66 GHz PLOin = -10 dBm VCC = VPS = VIFout = 3.0 V 100 0 60 20 80 -20 40 Operating Ambient Temperature TA (C)
5 0 -5 -10 -15 -20 0 fRFin = 1.9 GHz PRFin = -40 dBm PLOin = -10 dBm VCC = VPS = VIFout = 3.0 V 100 300 400 200 500 IF Output Frequency fIFout (MHz) 600
Remark The graphs indicate nominal characteristics.
16
Data Sheet P12808EJ2V0DS00
PC8112TB
PACKAGE DIMENSIONS
6 pin super minimold (Unit: mm)
2.10.1 1.250.1
2.00.2
1.3
0.65
0.65
0.1 MIN.
0.90.1
0.7
0 to 0.1
0.15+0.1 -0
0.2+0.1 -0.05
Data Sheet P12808EJ2V0DS00
17
PC8112TB
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). Keep the track length of the ground pins as short as possible. (3) The bypass capacitor (e.g. 1 000 pF) should be attached to the VCC pin. (4) The matching circuit should be externally attached to the IF output pin. (5) The DC cut capacitor must be each attached to the input and output pins.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative.
Recommended Condition Symbol IR35-00-3
Soldering Method Infrared Reflow
Soldering Conditions Package peak temperature: 235C or below Time: 30 seconds or less (at 210C) Note Count: 3, Exposure limit: None Package peak temperature: 215C or below Time: 40 seconds or less (at 200C) Note Count: 3, Exposure limit: None Soldering bath temperature: 260C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None Pin temperature: 300C Time: 3 seconds or less (per side of device) Note Exposure limit: None
VPS
VP15-00-3
Wave Soldering
WS60-00-1
Partial Heating
-
Note After opening the dry pack, keep it in a place below 25C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
18
Data Sheet P12808EJ2V0DS00
PC8112TB
[MEMO]
Data Sheet P12808EJ2V0DS00
19
PC8112TB
ATTENTION
OBSERVE PRECAUTIONS FOR HANDLING
ELECTROSTATIC SENSITIVE DEVICES
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
* The information in this document is current as of June, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4


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